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Growth of Ge quantum dot mediated by boron on Ge wetting layer 期刊论文
journal of crystal growth, 2005, 卷号: 279, 期号: 3-4, 页码: 329-334
Shi WH; Li CB; Luo LP; Cheng BW; Wang QM
收藏  |  浏览/下载:82/21  |  提交时间:2010/03/17
A 10-GHz bandwidth electroabsorption modulated laser by ultra-low-pressure selective area growth 期刊论文
chinese physics letters, 2005, 卷号: 22, 期号: 8, 页码: 2016-2019
Zhao, Q; Pan, JQ; Zhou, F; Wang, BJ; Wang, LF; Wang, W
收藏  |  浏览/下载:34/14  |  提交时间:2010/03/17
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Monolithic integration of an InGaAsP-InP strained DFB laser and an electroabsorption modulator by ultra-low-pressure selective-area-growth MOCVD 期刊论文
semiconductor science and technology, 2005, 卷号: 20, 期号: 6, 页码: 544-547
作者:  Pan JQ
收藏  |  浏览/下载:52/32  |  提交时间:2010/03/17


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