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PHOTOLUMINESCENCE SPECTRUM STUDY OF THE GAAS/SI EPILAYER GROWN BY USING A THIN AMORPHOUS SI FILM AS BUFFER LAYER 期刊论文
japanese journal of applied physics part 2-letters, 1995, 卷号: 34, 期号: 7b, 页码: l900-l902
HAO MS; LIANG JW; ZHENG LX; DENG LS; XIAO ZB; HU XW
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