Prediction and measurement of thermal transport across interfaces between semiconductor and adjacent layers

CORC > 工程热物理研究所 > 中国科学院工程热物理研究所 > 中国科学院工程热物理所（论文库） > 期刊论文（SCI）

	Prediction and measurement of thermal transport across interfaces between semiconductor and adjacent layers
	Wang, Zhaoliang 1; Tian, Xia 1; Liang, Jinguo 1; Zhu, Jie 2; Tang, Dawei 2; Xu, Ke 3
刊名	INTERNATIONAL JOURNAL OF THERMAL SCIENCES
	2014-05-01
卷号	79 页码:266-275
关键词	Thermal boundary conductance Two-color femtosecond laser pump-probe system Diffusive phonon scattering Semiconductor multilayer structure
英文摘要	The thermal boundary conductance between multilayer structures including Al film, semiconductors with high Debye temperatures (GaN, AlN, Si, diamond) and dielectric substrates (sapphire) has been measured using a two-color femtosecond laser pump-probe system (a variation of transient time-domain thermoreflectance, TDTR). The thermal boundary conductance for the combinations of semiconductors and dielectrics falls within a relatively narrow range, 10-20 MW m(-2) K-1, at room temperature. The measured thermal boundary conductance between Al film and semiconductor or dielectric substrates is one order of magnitude larger than that between semiconductor and dielectric substrates. A modified diffuse mismatch model (DMM) is used to interpret the data and extract the phonon transmissivity at the interface. The predicted results of the DMM corrected by attenuation constant agree well with the experimental values. Over a wide phonon velocity, both the measured and predicted results decrease with the increasing average phonon velocity. Both the vibration mismatch and changes in the localized phonon transport near the interface contribute to the reduction in thermal boundary conductance. Other scattering mechanisms are discussed which may explain the failure of the DMM at room temperature. (C) 2014 Elsevier Masson SAS. All rights reserved.
WOS标题词	Science & Technology ; Physical Sciences ; Technology
类目[WOS]	Thermodynamics ; Engineering, Mechanical
研究领域[WOS]	Thermodynamics ; Engineering
关键词[WOS]	TRANSIENT THERMOREFLECTANCE TECHNIQUE ; ELECTRON-BOUNDARY SCATTERING ; KAPITZA CONDUCTANCE ; THIN-FILMS ; HEAT-FLOW ; CONDUCTIVITY ; RESISTANCE ; PHONON ; MICROSCOPY ; SUBSTRATE
收录类别	SCI
语种	英语
WOS记录号	WOS:000334140500024
公开日期	2015-12-22
内容类型	期刊论文
源URL	[http://ir.etp.ac.cn/handle/311046/106041]
专题	工程热物理研究所_中国科学院工程热物理所（论文库）_期刊论文（SCI）
作者单位	1.China Univ Petr, Thermal Engn & Power Dept, Qingdao 266580, Peoples R China 2.Chinese Acad Sci, Inst Engn Thermophys, Beijing 100081, Peoples R China 3.Chinese Acad Sci, Inst Nanotech & Nanobion, Suzhou 215123, Peoples R China
推荐引用方式 GB/T 7714	Wang, Zhaoliang,Tian, Xia,Liang, Jinguo,et al. Prediction and measurement of thermal transport across interfaces between semiconductor and adjacent layers[J]. INTERNATIONAL JOURNAL OF THERMAL SCIENCES,2014,79:266-275.
APA	Wang, Zhaoliang,Tian, Xia,Liang, Jinguo,Zhu, Jie,Tang, Dawei,&Xu, Ke.(2014).Prediction and measurement of thermal transport across interfaces between semiconductor and adjacent layers.INTERNATIONAL JOURNAL OF THERMAL SCIENCES,79,266-275.
MLA	Wang, Zhaoliang,et al."Prediction and measurement of thermal transport across interfaces between semiconductor and adjacent layers".INTERNATIONAL JOURNAL OF THERMAL SCIENCES 79(2014):266-275.