Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization

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	Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization
	Chen QS(陈启生); Lu J; Zhang ZB(张自兵); Wei GD; Prasad V
刊名	Journal of Crystal Growth
	2006
通讯作者邮箱	qschen@imech.ac.cn
卷号	292 期号:2 页码:197-200
关键词	growth models X-ray diffraction growth from vapor single crystal growth silicon carbide
ISSN号	0022-0248
通讯作者	Chen, QS (reprint author), Chinese Acad Sci, Inst Mech, 15 Bei Si Huan Xi Rd, Beijing 100080, Peoples R China.
中文摘要	Silicon carbide bulk crystals were grown in an induction-heating furnace using the physical vapor transport method. Crystal growth modeling was performed to obtain the required inert gas pressure and temperatures for sufficiently large growth rates. The SiC crystals were expanded by designing a growth chamber having a positive temperature gradient along the growth interface. The obtained 6H-SiC crystals were cut into wafers and characterized by Raman scattering spectroscopy and X-ray diffraction, and the results showed that most parts of the crystals had good crystallographic structures.
学科主题	力学
类目[WOS]	Crystallography ; Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]	Crystallography ; Materials Science ; Physics
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000239481000006
公开日期	2007-06-15 ; 2007-12-05 ; 2009-06-23
内容类型	期刊论文
源URL	[http://dspace.imech.ac.cn/handle/311007/16331]
专题	力学研究所_力学所知识产出(1956-2008)
推荐引用方式 GB/T 7714	Chen QS,Lu J,Zhang ZB,et al. Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization[J]. Journal of Crystal Growth,2006,292(2):197-200.
APA	Chen QS,Lu J,Zhang ZB,Wei GD,&Prasad V.(2006).Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization.Journal of Crystal Growth,292(2),197-200.
MLA	Chen QS,et al."Growth of Silicon Carbide Bulk Crystals by Physical Vapor Transport Method and Modeling Efforts in the Process Optimization".Journal of Crystal Growth 292.2(2006):197-200.