Development of high-power OPCPA laser at 1064 and 780 nm

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 强场激光物理国家重点实验室

	Development of high-power OPCPA laser at 1064 and 780 nm
	Leng YX(冷雨欣) ; Liang XY(梁晓燕) ; Zhao BZ ; Wang C ; Jiang YL ; Yang XD ; Lu HH ; Lin LH(林礼煌) ; Zhang ZQ ; Li RX(李儒新) ; Xu ZZ(徐至展)
刊名	ieee j. sel. top. quantum electron.
	2006
卷号	12 期号:2 页码:187
关键词	high-peak-power ultrashort-pulse laser optical parametric chirped pulse amplification
ISSN号	1077-260x
中文摘要	a compact 10-tw/100-fs level ultrashort-pulse and ultra-intense laser system at 1064 nm based on optical parametric chirped pulse amplification (opcpa) scheme is described, at which the pump and seed for the optical parametric amplification (opa) process is optically synchronized. we investigated the output stability and the conversion efficiency of the system. moreover, a design toward higher peak power output is given and an optically synchronized amplifier based on the concept of opcpa at 800 nm is preliminarily explored.
收录类别	EI
语种	英语
WOS记录号	WOS:000237850100005
公开日期	2009-09-18
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/806]
专题	上海光学精密机械研究所_强场激光物理国家重点实验室
推荐引用方式 GB/T 7714	Leng YX,Liang XY,Zhao BZ,et al. Development of high-power OPCPA laser at 1064 and 780 nm[J]. ieee j. sel. top. quantum electron.,2006,12(2):187, 193.
APA	冷雨欣.,梁晓燕.,Zhao BZ.,Wang C.,Jiang YL.,...&徐至展.(2006).Development of high-power OPCPA laser at 1064 and 780 nm.ieee j. sel. top. quantum electron.,12(2),187.
MLA	冷雨欣,et al."Development of high-power OPCPA laser at 1064 and 780 nm".ieee j. sel. top. quantum electron. 12.2(2006):187.