Localization of charge carriers in the normal state of underdoped Bi2+xSr2-xCuO6+delta

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	Localization of charge carriers in the normal state of underdoped Bi2+xSr2-xCuO6+delta
	Luo, HQ ; Wen, HH
刊名	PHYSICAL REVIEW B
	2014
卷号	89 期号:2
ISSN号	1098-0121
通讯作者	Luo, HQ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要	We report the transport results of underdoped Bi2+xSr2-xCuO6+delta (0.05 <= x <= 0.40) single crystals. A close relationship between the upturn of in-plane resistivity [rho(ab)(T)] and the sign of magnetoresistance in the normal state upon Bi substitutions is found. Combining the results of the field and angular dependence of magnetoresistance, the model fitting of rho(ab)(T), as well as the Hall coefficient results, we suggest a crossover from weak to strong localization of charge carriers in the underdoped Bi2+xSr2-xCuO6+delta, which may be responsible for the rather narrow superconducting dome in this system.
资助信息	National Science Foundation of China; Ministry of Science and Technology of China (973 project) [2011CBA00110]
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/59567]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Luo, HQ,Wen, HH. Localization of charge carriers in the normal state of underdoped Bi2+xSr2-xCuO6+delta[J]. PHYSICAL REVIEW B,2014,89(2).
APA	Luo, HQ,&Wen, HH.(2014).Localization of charge carriers in the normal state of underdoped Bi2+xSr2-xCuO6+delta.PHYSICAL REVIEW B,89(2).
MLA	Luo, HQ,et al."Localization of charge carriers in the normal state of underdoped Bi2+xSr2-xCuO6+delta".PHYSICAL REVIEW B 89.2(2014).