Resonant charge relaxation as a likely source of the enhanced thermopower in FeSi | |
Sun, PJ ; Wei, BP ; Menzel, D ; Steglich, F | |
刊名 | PHYSICAL REVIEW B |
2014 | |
卷号 | 90期号:24 |
ISSN号 | 1098-0121 |
通讯作者 | Sun, PJ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
中文摘要 | The enhanced thermopower of the correlated semiconductor FeSi is found to be robust against the sign of the relevant charge carriers. At T approximate to 70 K, the position of both the high-temperature shoulder of the thermopower peak and the nonmagnetic-enhanced paramagnetic crossover, the Nernst coefficient. assumes a large maximum and the Hall mobility mu(H) diminishes to below 1 cm(2)/V s. These cause the dimensionless ratio nu/mu(H) -a measure of the energy dispersion of the charge scattering time tau (epsilon)-to exceed that of classical metals and semiconductors by two orders of magnitude. Concomitantly, the resistivity exhibits a hump and the magnetoresistance changes its sign. Our observations hint at a resonant scattering of the charge carriers at the magnetic crossover, imposing strong constraints on the microscopic interpretation of the robust thermopower enhancement in FeSi. |
资助信息 | MOST of China [2012CB921701]; National Science Foundation of China [11474332]; Chinese Academy of Sciences [XDB07020200]; DFG [FG 960] |
语种 | 英语 |
公开日期 | 2015-04-14 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/59488] |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Sun, PJ,Wei, BP,Menzel, D,et al. Resonant charge relaxation as a likely source of the enhanced thermopower in FeSi[J]. PHYSICAL REVIEW B,2014,90(24). |
APA | Sun, PJ,Wei, BP,Menzel, D,&Steglich, F.(2014).Resonant charge relaxation as a likely source of the enhanced thermopower in FeSi.PHYSICAL REVIEW B,90(24). |
MLA | Sun, PJ,et al."Resonant charge relaxation as a likely source of the enhanced thermopower in FeSi".PHYSICAL REVIEW B 90.24(2014). |
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