Gate-dependent pseudospin mixing in graphene/boron nitride moire superlattices

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	Gate-dependent pseudospin mixing in graphene/boron nitride moire superlattices
	Shi, ZW ; Jin, CH ; Yang, W ; Ju, L ; Horng, J ; Lu, XB ; Bechtel, HA ; Martin, MC ; Fu, DY ; Wu, JQ ; Watanabe, K ; Taniguchi, T ; Zhang, YB ; Bai, XD ; Wang, EG ; Zhang, GY ; Wang, F
刊名	NATURE PHYSICS
	2014
卷号	10 期号:10 页码:743
ISSN号	1745-2473
通讯作者	Wang, F (reprint author), Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA.
中文摘要	Electrons in graphene are described by relativistic Dirac-Weyl spinors with a two-component pseudospin(1-12). The unique pseudospin structure of Dirac electrons leads to emerging phenomena such as the massless Dirac cone(2), anomalous quantum Hall effect(2,3), and Klein tunnelling(4,5) in graphene. The capability to manipulate electron pseudospin is highly desirable for novel graphene electronics, and it requires precise control to differentiate the two graphene sublattices at the atomic level. Graphene/boron nitride moire superlattices, where a fast sublattice oscillation due to boron and nitrogen atoms is superimposed on the slow moire period, provides an attractive approach to engineer the electron pseudospin in graphene(13-18). This unusual moire superlattice leads to a spinor potential with unusual hybridization of electron pseudospins, which can be probed directly through infrared spectroscopy because optical transitions are very sensitive to excited state wavefunctions. Here, we perform micro-infrared spectroscopy on a graphene/boron nitride heterostructure and demonstrate that the moire superlattice potential is dominated by a pseudospin-mixing component analogous to a spatially varying pseudomagnetic field. In addition, we show that the spinor potential depends sensitively on the gate-induced carrier concentration in graphene, indicating a strong renormalization of the spinor potential from electron-electron interactions.
资助信息	Office of Naval Research [N00014-13-1-0464]; Office of Basic Energy Science, Department of Energy [DE SC0003949, DE AC02 05CH11231]; David and Lucile Packard fellowship; National Basic Research Program of China [2013CB934500, 2012CB921302]; National Natural Science Foundation of China [61325021, 91223204]; Office of Science, Office of Basic Energy Sciences, of the US Department of Energy [DE-AC02-05CH11231]
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/59392]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Shi, ZW,Jin, CH,Yang, W,et al. Gate-dependent pseudospin mixing in graphene/boron nitride moire superlattices[J]. NATURE PHYSICS,2014,10(10):743.
APA	Shi, ZW.,Jin, CH.,Yang, W.,Ju, L.,Horng, J.,...&Wang, F.(2014).Gate-dependent pseudospin mixing in graphene/boron nitride moire superlattices.NATURE PHYSICS,10(10),743.
MLA	Shi, ZW,et al."Gate-dependent pseudospin mixing in graphene/boron nitride moire superlattices".NATURE PHYSICS 10.10(2014):743.