Filament growth dynamics in solid electrolyte-based resistive memories revealed by in situ TEM

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	Filament growth dynamics in solid electrolyte-based resistive memories revealed by in situ TEM
	Tian, XZ ; Wang, LF ; Wei, JK ; Yang, SZ ; Wang, WL ; Xu, Z ; Bai, XD
刊名	NANO RESEARCH
	2014
卷号	7 期号:7 页码:1065
关键词	resistive switching conductive filaments in situ transmission electron microscope real-time observation computer simulation
ISSN号	1998-0124
通讯作者	Xu, Z (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Inst Phys, Beijing 100190, Peoples R China.
中文摘要	Solid electrolyte based-resistive memories have been considered to be a potential candidate for future information technology with applications in non-volatile memory, logic circuits and neuromorphic computing. A conductive filament model has been generally accepted to be the underlying mechanism for the resistive switching. However, the growth dynamics of such conductive filaments is still not fully understood. Here, we explore the controllability of filament growth by correlating observations of the filament growth with the electric field distribution and several other factors. The filament growth behavior has been recorded using in situ transmission electron microscopy. By studying the real-time recorded filament growth behavior and morphologies, we have been able to simulate the electric field distribution in accordance with our observations. Other factors have also been shown to affect the filament growth, such as Joule heating and electrolyte infrastructure. This work provides insight into the controllable growth of conductive filaments and will help guide research into further functionalities of nanoionic resistive memories.
资助信息	National Key Basic Research (973) Program of China from the Ministry of Science and Technology [2012CB933003, 2013CB932601, 2013CB934500]; National Natural Science Foundation of China [51172273]
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/59347]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Tian, XZ,Wang, LF,Wei, JK,et al. Filament growth dynamics in solid electrolyte-based resistive memories revealed by in situ TEM[J]. NANO RESEARCH,2014,7(7):1065.
APA	Tian, XZ.,Wang, LF.,Wei, JK.,Yang, SZ.,Wang, WL.,...&Bai, XD.(2014).Filament growth dynamics in solid electrolyte-based resistive memories revealed by in situ TEM.NANO RESEARCH,7(7),1065.
MLA	Tian, XZ,et al."Filament growth dynamics in solid electrolyte-based resistive memories revealed by in situ TEM".NANO RESEARCH 7.7(2014):1065.