Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition | |
Yang, H ; Shen, CM ; Tian, Y ; Wang, GQ ; Lin, SX ; Zhang, Y ; Gu, CZ ; Li, JJ ; Gao, HJ | |
刊名 | CHINESE PHYSICS B |
2014 | |
卷号 | 23期号:9 |
关键词 | graphene chemical vapor deposition Raman spectra |
ISSN号 | 1674-1056 |
通讯作者 | Gao, HJ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China. |
中文摘要 | Large-area monolayer graphene samples grown on polycrystalline copper foil by thermal chemical vapor deposition with differing CH4 flux and growth time are investigated by Raman spectra, scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. The defects, number of layers, and quality of graphene are shown to be controllable through tuning the reaction conditions: ideally to 2-3 sccm CH4 for 30 minutes. |
资助信息 | National Basic Research Program of China [2013CB933604, 2010CB923004, 2009CB929103]; National Natural Science Foundation of China; Chinese Academy of Sciences |
语种 | 英语 |
公开日期 | 2015-04-14 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/58983] |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Yang, H,Shen, CM,Tian, Y,et al. Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition[J]. CHINESE PHYSICS B,2014,23(9). |
APA | Yang, H.,Shen, CM.,Tian, Y.,Wang, GQ.,Lin, SX.,...&Gao, HJ.(2014).Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition.CHINESE PHYSICS B,23(9). |
MLA | Yang, H,et al."Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition".CHINESE PHYSICS B 23.9(2014). |
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