Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire

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	Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire
	Du, CH ; Ma, ZG ; Zhou, JM ; Lu, TP ; Jiang, Y ; Jia, HQ ; Liu, WM ; Chen, H
刊名	APPLIED PHYSICS LETTERS
	2014
卷号	104 期号:15
ISSN号	0003-6951
通讯作者	Chen, H (reprint author), Chinese Acad Sci, Beijing Natl Lab Condense Matter Phys, Beijing Key Lab New Energy Mat & Devices, Key Lab Renewable Energy,Inst Phys, Beijing 100190, Peoples R China.
中文摘要	The asymmetric dual-wavelength (green/blue) coupled InGaN/GaN multiple quantum wells were proposed to modulate the green emission intensity. Electroluminescent measurements demonstrate the conspicuous increment of the green light intensity by decreasing the coupled barrier thickness. This was partly attributed to capture of more carriers when holes tunnel across the thinner barrier from the blue quantum wells, as a hole reservoir, to the green quantum wells. While lower effective barrier height of the blue quantum wells benefits improved hole transportation from p-GaN to the active region. Efficiency droop of the green quantum wells was partially alleviated due to the enhanced injection efficiency of holes. (C) 2014 AIP Publishing LLC.
资助信息	National High Technology Research and Development Program of China [2011AA03A112, 2011AA03A106]; National Nature Science Foundation [11204360, 61210014]
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/58918]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Du, CH,Ma, ZG,Zhou, JM,et al. Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire[J]. APPLIED PHYSICS LETTERS,2014,104(15).
APA	Du, CH.,Ma, ZG.,Zhou, JM.,Lu, TP.,Jiang, Y.,...&Chen, H.(2014).Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire.APPLIED PHYSICS LETTERS,104(15).
MLA	Du, CH,et al."Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire".APPLIED PHYSICS LETTERS 104.15(2014).