Room Temperature Formation of High-Mobility Two-Dimensional Electron Gases at Crystalline Complex Oxide Interfaces

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	Room Temperature Formation of High-Mobility Two-Dimensional Electron Gases at Crystalline Complex Oxide Interfaces
	Chen, YZ ; Bovet, N ; Kasama, T ; Gao, WW ; Yazdi, S ; Ma, C ; Pryds, N ; Linderoth, S
刊名	ADVANCED MATERIALS
	2014
卷号	26 期号:9 页码:1462
ISSN号	0935-9648
通讯作者	Chen, YZ (reprint author), Tech Univ Denmark, Dept Energy Convers & Storage, Riso Campus, DK-4000 Roskilde, Denmark.
中文摘要	Well-controlled sub-unit-cell layer-bylayer epitaxial growth of spinel alumina is achieved at room temperature on a TiO2-terminated SrTiO(3)single-crystalline substrate. By tailoring the interface redox reaction, 2D electron gases with mobilities exceeding 3000 cm 2 V-1 s(-1) are achieved at this novel oxide interface.
语种	英语
公开日期	2015-04-14
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/58840]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Chen, YZ,Bovet, N,Kasama, T,et al. Room Temperature Formation of High-Mobility Two-Dimensional Electron Gases at Crystalline Complex Oxide Interfaces[J]. ADVANCED MATERIALS,2014,26(9):1462.
APA	Chen, YZ.,Bovet, N.,Kasama, T.,Gao, WW.,Yazdi, S.,...&Linderoth, S.(2014).Room Temperature Formation of High-Mobility Two-Dimensional Electron Gases at Crystalline Complex Oxide Interfaces.ADVANCED MATERIALS,26(9),1462.
MLA	Chen, YZ,et al."Room Temperature Formation of High-Mobility Two-Dimensional Electron Gases at Crystalline Complex Oxide Interfaces".ADVANCED MATERIALS 26.9(2014):1462.