Indirect-to-direct band gap transition of the ZrS2 monolayer by strain: first-principles calculations

	Indirect-to-direct band gap transition of the ZrS2 monolayer by strain: first-principles calculations
	Li, Y ; Kang, J ; Li, JB
刊名	rsc advances
	2014
卷号	4 期号:15 页码:7396-7401
学科主题	半导体物理
收录类别	SCI
公开日期	2015-05-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26479]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Li, Y,Kang, J,Li, JB. Indirect-to-direct band gap transition of the ZrS2 monolayer by strain: first-principles calculations[J]. rsc advances,2014,4(15):7396-7401.
APA	Li, Y,Kang, J,&Li, JB.(2014).Indirect-to-direct band gap transition of the ZrS2 monolayer by strain: first-principles calculations.rsc advances,4(15),7396-7401.
MLA	Li, Y,et al."Indirect-to-direct band gap transition of the ZrS2 monolayer by strain: first-principles calculations".rsc advances 4.15(2014):7396-7401.