The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy

	The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy
	Du, WN ; Yang, XG ; Wang, XY ; Pan, HY ; Ji, HM ; Luo, S ; Yang, T ; Wang, ZG
刊名	journal of crystal growth
	2014
卷号	396 页码:33-37
学科主题	半导体材料
收录类别	SCI
公开日期	2015-04-02
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26319]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Du, WN,Yang, XG,Wang, XY,et al. The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy[J]. journal of crystal growth,2014,396:33-37.
APA	Du, WN.,Yang, XG.,Wang, XY.,Pan, HY.,Ji, HM.,...&Wang, ZG.(2014).The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy.journal of crystal growth,396,33-37.
MLA	Du, WN,et al."The self-seeded growth of InAsSb nanowires on silicon by metal-organic vapor phase epitaxy".journal of crystal growth 396(2014):33-37.