The role played by strain on phase separation in InGaN quantum wells | |
Yang, YJ ; Ma, P ; Wei, XC ; Zeng, YP | |
刊名 | solid state communications |
2014 | |
卷号 | 194页码:25-29 |
学科主题 | 半导体器件 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2015-03-25 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/26204] |
专题 | 半导体研究所_中科院半导体照明研发中心 |
推荐引用方式 GB/T 7714 | Yang, YJ,Ma, P,Wei, XC,et al. The role played by strain on phase separation in InGaN quantum wells[J]. solid state communications,2014,194:25-29. |
APA | Yang, YJ,Ma, P,Wei, XC,&Zeng, YP.(2014).The role played by strain on phase separation in InGaN quantum wells.solid state communications,194,25-29. |
MLA | Yang, YJ,et al."The role played by strain on phase separation in InGaN quantum wells".solid state communications 194(2014):25-29. |
个性服务 |
查看访问统计 |
相关权益政策 |
暂无数据 |
收藏/分享 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论