Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer

	Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer
	Yu, Zhi-Guo ; Zhao, Li-Xia ; Wei, Xue-Cheng ; Lu, Hong-Xi ; Wang, Jun-Xi ; Zeng, Yi-Ping ; Li, Jin-Min ; Sun, Xue-Jiao ; An, Ping-Bo ; Zhu, Shi-Chao ; Liu, Lei ; Tian, Li-Xin ; Zhang, Feng
刊名	optics express
	2014
卷号	22 期号:21 页码:a1596-a1603
学科主题	半导体器件
收录类别	SCI
语种	英语
公开日期	2015-03-19
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26031]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Yu, Zhi-Guo,Zhao, Li-Xia,Wei, Xue-Cheng,et al. Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer[J]. optics express,2014,22(21):a1596-a1603.
APA	Yu, Zhi-Guo.,Zhao, Li-Xia.,Wei, Xue-Cheng.,Lu, Hong-Xi.,Wang, Jun-Xi.,...&Zhang, Feng.(2014).Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer.optics express,22(21),a1596-a1603.
MLA	Yu, Zhi-Guo,et al."Surface plasmon-enhanced nanoporous GaN-based green light-emitting diodes with Al2O3 passivation layer".optics express 22.21(2014):a1596-a1603.