Observation of anomalous linear photogalvanic effect and its dependence on wavelength in undoped InGaAs/AlGaAs multiple quantum well

	Observation of anomalous linear photogalvanic effect and its dependence on wavelength in undoped InGaAs/AlGaAs multiple quantum well
	Zhu, LP ; Liu, Y ; Gao, HS ; Qin, XD ; Li, Y ; Wu, Q ; Chen, YH
刊名	nanoscale research letters
	2014
卷号	9 页码:493
学科主题	半导体材料
收录类别	SCI
公开日期	2015-03-25
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26206]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Zhu, LP,Liu, Y,Gao, HS,et al. Observation of anomalous linear photogalvanic effect and its dependence on wavelength in undoped InGaAs/AlGaAs multiple quantum well[J]. nanoscale research letters,2014,9:493.
APA	Zhu, LP.,Liu, Y.,Gao, HS.,Qin, XD.,Li, Y.,...&Chen, YH.(2014).Observation of anomalous linear photogalvanic effect and its dependence on wavelength in undoped InGaAs/AlGaAs multiple quantum well.nanoscale research letters,9,493.
MLA	Zhu, LP,et al."Observation of anomalous linear photogalvanic effect and its dependence on wavelength in undoped InGaAs/AlGaAs multiple quantum well".nanoscale research letters 9(2014):493.