Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties

	Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties
	Liang, JR ; Wu, MJ ; Hu, M ; Liu, J ; Zhu, NW ; Xia, XX ; Chen, HD
刊名	chinese physics b
	2014
卷号	23 期号:7 页码:076801
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2015-03-25
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26265]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Liang, JR,Wu, MJ,Hu, M,et al. Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties[J]. chinese physics b,2014,23(7):076801.
APA	Liang, JR.,Wu, MJ.,Hu, M.,Liu, J.,Zhu, NW.,...&Chen, HD.(2014).Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties.chinese physics b,23(7),076801.
MLA	Liang, JR,et al."Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties".chinese physics b 23.7(2014):076801.