Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition

	Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition
	He, XG ; Zhao, DG ; Jiang, DS ; Liu, ZS ; Chen, P ; Le, LC ; Yang, J ; Li, XJ ; Zhang, SM ; Zhu, JJ ; Wang, H ; Yang, H
刊名	thin solid films
	2014
卷号	564 页码:135-139
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2015-03-25
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26176]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	He, XG,Zhao, DG,Jiang, DS,et al. Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition[J]. thin solid films,2014,564:135-139.
APA	He, XG.,Zhao, DG.,Jiang, DS.,Liu, ZS.,Chen, P.,...&Yang, H.(2014).Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition.thin solid films,564,135-139.
MLA	He, XG,et al."Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition".thin solid films 564(2014):135-139.