Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT

	Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT
	Qu, SQ ; Wang, XL ; Xiao, HL ; Wang, CM ; Jiang, LJ ; Feng, C ; Chen, H ; Yin, HB ; Yan, JD ; Peng, EC ; Kang, H ; Wang, ZG ; Hou, X
刊名	european physical journal-applied physics
	2014
卷号	68 期号:1 页码:10105
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2015-03-20
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/26123]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Qu, SQ,Wang, XL,Xiao, HL,et al. Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT[J]. european physical journal-applied physics,2014,68(1):10105.
APA	Qu, SQ.,Wang, XL.,Xiao, HL.,Wang, CM.,Jiang, LJ.,...&Hou, X.(2014).Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT.european physical journal-applied physics,68(1),10105.
MLA	Qu, SQ,et al."Analysis of GaN cap layer effecting on critical voltage for electrical degradation of AlGaN/GaN HEMT".european physical journal-applied physics 68.1(2014):10105.