Yield analysis of large-area high-power single-chip GaN-based light- emitting diodes with network design

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	Yield analysis of large-area high-power single-chip GaN-based light- emitting diodes with network design
	Huang, W (黄伟); Huang, HJ (黄宏娟); Cai, Y (蔡勇); Zhang, BS (张宝顺)
刊名	PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
	2014
卷号	8 期号:3 页码:260-263
关键词	high-power light-emitting diodes production yield GaN
通讯作者	Cai, Y (蔡勇)
英文摘要	: In this Letter, a GaN-based high-power (HP) single-chip (SC) large-area LED with parallel and series network structure is fabricated. The optical characteristics of the HP-SC LED is investigated. Driven at 600 mA, the optical output power of the HP-SC LED chip is measured to be 9.7 W, corresponding to an EQE of 26.4%, which is 19.6% lower than that of the standard small LED cell due to both the lateral light-extraction efficiency degradation and the self-heating effect. A statistical analysis was carried out to investigate the yield of the fabricated HP-SC LEDs, the experimental results agree with the theoretical calculations very well, validating the feasibility of this design on the production yield for the large-area LEDs.
收录类别	SCI
语种	英语
WOS记录号	WOS:000332928600011
公开日期	2015-02-03
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/1784]
专题	苏州纳米技术与纳米仿生研究所_纳米加工公共平台
通讯作者	Cai, Y (蔡勇)
推荐引用方式 GB/T 7714	Huang, W ,Huang, HJ ,Cai, Y ,et al. Yield analysis of large-area high-power single-chip GaN-based light- emitting diodes with network design[J]. PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,2014,8(3):260-263.
APA	Huang, W ,Huang, HJ ,Cai, Y ,&Zhang, BS .(2014).Yield analysis of large-area high-power single-chip GaN-based light- emitting diodes with network design.PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS,8(3),260-263.
MLA	Huang, W ,et al."Yield analysis of large-area high-power single-chip GaN-based light- emitting diodes with network design".PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 8.3(2014):260-263.