Large eddy simulation of industrial Czochralski Si crystal growth under transverse magnetic field

CORC > 南海海洋研究所 > 中国科学院南海海洋研究所 > 热带海洋环境国家重点实验室(LTO)

	Large eddy simulation of industrial Czochralski Si crystal growth under transverse magnetic field
	Chen, X ; Zhan, JM ; Li, YS ; Cen, XR
刊名	JOURNAL OF CRYSTAL GROWTH
	2014
卷号	389 页码:60-67
关键词	Computer simulation Heat transfer Semiconducting silicon Magnetic field assisted Czochralski method
ISSN号	0022-0248
通讯作者	cejmzhan@gmail.com
中文摘要	In the present study, a simulation of large diameter industrial Czochralski Si crystal growth is carried out using a combination of 2D axisymmetric global and 3D local models. The 2D global steady simulation is performed to obtain the thermal boundary conditions on the external wall of the crucible holder for 3D transient simulation under TMF. In the 3D model, the large eddy simulation (LES) turbulence model is adopted to obtain more accurate melt convection. The computed temperature distribution on the crucible wall agrees quite well with that from DNS simulation as well as experimental results in the absence of a magnetic field or with a vertical magnetic field. In order to clarify the effect of a transverse magnetic field (TMF), three different magnetic field intensities are used for simulation. The melt flow structures and temperature fluctuations under TMF are presented. The vortices at the corners of the crucible wall in the presence of weak or moderate magnetic field would not exist if axisymmetric thermal boundary conditions are used in the 3D model. The clamping effect of TMF is also studied. (C)2013 Elsevier B.V. All rights reserved
学科主题	Crystallography ; Materials Science ; Physics
收录类别	SCI
资助信息	Fundamental Research Funds for the Central Universities
原文出处	ELSEVIER SCIENCE BV
WOS记录号	WOS:000335768600010
公开日期	2014-12-11
内容类型	期刊论文
源URL	[http://ir.scsio.ac.cn/handle/344004/10566]
专题	南海海洋研究所_热带海洋环境国家重点实验室(LTO)
推荐引用方式 GB/T 7714	Chen, X,Zhan, JM,Li, YS,et al. Large eddy simulation of industrial Czochralski Si crystal growth under transverse magnetic field[J]. JOURNAL OF CRYSTAL GROWTH,2014,389:60-67.
APA	Chen, X,Zhan, JM,Li, YS,&Cen, XR.(2014).Large eddy simulation of industrial Czochralski Si crystal growth under transverse magnetic field.JOURNAL OF CRYSTAL GROWTH,389,60-67.
MLA	Chen, X,et al."Large eddy simulation of industrial Czochralski Si crystal growth under transverse magnetic field".JOURNAL OF CRYSTAL GROWTH 389(2014):60-67.