SRAM (Static Random Access Memory), as one of the most widely used memory, is extensively used in the fields of industrial automation, military precision weapons and spacecraft control systems with the advantages of low power consumption, quick data access, etc. However, high-energy radiation particles in space can interact with SRAM and produce a variety of radiation effects, of which the most obvious is the impacts of the total dose irradiation shown on SRAM performance, thus seriously threatening the reliability of the successful completion of the space task and aerospace systems. In order to keep the reliability of SRAM-based devices under space radiation environment, in this paper, the total dose radiation effects, damage mechanism and total dose test methods and evaluation technology of the large-scale SRAM devices were probed detailly to 1) establish a online irradiation and test system of SRAM devices, 2) develop a full parameters off-line testing technology, 3) reveal the mechanism of total dose radiation damage based on the hardware and software above, 4) establish a more comprehensive and more detailed test method and assessment technology of total dose irradiation experiments. Online testing system is a set of parameters testing system developed based on field-programmable gate arrays (FPGA). The parameters it can test include the quiescent power dissipation current, the dynamic consumption current and flip number of memory cells. The precision of current test can achieve up to dozens of nanoampere. The online Irradiation offset system can exert excitation signal and data exchange on SRAM within the cobalt. And under the requriment of complete signal, the maximum working frequency can achieve up to 20MHz. Morever, the offline testing is conducted on the Adwantest 93000 large scale integrated circuit testing machine. By developing the software and test procedure, it enables to do full parameters test and complex function test of SRAM and its precision can achieve plus or minus 10 mV and 100 uA, respectively. The results of the study on total dose radiation effect and damage mechanism of SRAM device indicted: 1) the amplitude change of static power current and dynamic power consumption of SRAM was the most obvious with rise of the total dose, and the maximum was hundreds of times more than initial value. And that other direct current parameter also existed some changes in small range, 2) there are mainly two function failure modes of SRAM device under total dose radiation: failure of storage cell and peripheral circuit malfunction. All things being equal, off-line test was more correct and stricter no matter on aspects of electric current test, reversal of storage cell and functional test, 3) test the current parameter of SRAM after radiation, there were wide difference between test results when the test data in using were different, and the maximum could reach tens of milliampere, 4) however static power current changed with total doses was the most violent which could not declare that could only test the static power current in the assessment of total doses radiation of SRAM. Although other electrical parameters changed with the total doses were small, there was possibility that out of operation before static power current, 5) Process of radiation, total doses radiation damage of SRAM did not show obvious difference under the polarization condition of dynamic read-write and static data storage, 6) Under the environment of total doses radiation, devices in different working frequency suffered total doses radiation damage were different, and the damage was more severe when the working frequency was higher. The total dose radiation damage and evaluation method of SRAM devices were probed through a variety of experiment and test methods under the total dose radiation. Effects of the irradiation conditions and test conditions on the result of the experiment were considered comprephensively, and finally a total dose radiation damage assessment method of SRAM devices was developed.