Ohmic contact to n-type Ge with compositional Ti nitride

	Ohmic contact to n-type Ge with compositional Ti nitride
	H D Wu, W Huang, W F Lu, R F Tang, C Li, H K Lai, S Y Chen, and C L Xue
刊名	applied surface science
	2013
卷号	284 页码:877-880
学科主题	光电子学
收录类别	EI
语种	英语
公开日期	2014-05-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24920]
专题	半导体研究所_集成光电子学国家重点实验室
推荐引用方式 GB/T 7714	H D Wu, W Huang, W F Lu, R F Tang, C Li, H K Lai, S Y Chen, and C L Xue. Ohmic contact to n-type Ge with compositional Ti nitride[J]. applied surface science,2013,284:877-880.
APA	H D Wu, W Huang, W F Lu, R F Tang, C Li, H K Lai, S Y Chen, and C L Xue.(2013).Ohmic contact to n-type Ge with compositional Ti nitride.applied surface science,284,877-880.
MLA	H D Wu, W Huang, W F Lu, R F Tang, C Li, H K Lai, S Y Chen, and C L Xue."Ohmic contact to n-type Ge with compositional Ti nitride".applied surface science 284(2013):877-880.