High Power Efficiency Yellow Phosphorescent OLEDs by Using New Iridium Complexes with Halogen-Substituted 2-Phenylbenzo[d]thiazole Ligands | |
Fan C ; Zhu LP ; Jiang B ; Li YF ; Zhao FC ; Ma DG ; Qin JG ; Yang CL | |
刊名 | journal of physical chemistry c
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2013 | |
卷号 | 117期号:37页码:19134-19141 |
关键词 | LIGHT-EMITTING-DIODES HOST MATERIAL DEVICES BLUE ELECTROLUMINESCENCE PHOTOPHYSICS RED ELECTROCHEMISTRY EXCITONS ORANGE |
ISSN号 | 1932-7447 |
通讯作者 | ma dg |
中文摘要 | on the basis of the yellow iridium phosphor, bis(2-phenylbenzothiozolato-n,c-2 ')iridium(acetylacetonate) [(bt)(2)ir(acac)], the three halogen-substituted analogues were designed and synthesized by introducing the f, cl, and br atoms to the 4-position of phenyl ring in the ligand of 2-phenylbenzo[d]thiazole. the optoelectronic properties of all the four iridium complexes were fully investigated. compared to the 559 nm peak emission of (bt)(2)ir(acac) in ch2cl2 solution, adding f atom caused the peak emission of (4-f-bt)(2)ir(acac) blue shift to 540 nm, while adding cl and br atoms made the peak emissions of (4-cl-bt)(2)ir(acac) and (4-br-bt)(2)ir(acac) slightly blue shift to 554 and 555 nm, respectively. the pholeds using the four iridium complexes as dopants were initially fabricated in the conventional device structure (device i): ito/moo3/npb/cbp/cbp:dopants/tpbi/lif/al. the three halogen-substituted analogues exhibited turn-on voltages of 3.5-3.9 v, maximum current efficiencies of 35.5-52.4 cd a(-1), maximum power efficiencies of 18.3-29.4 lm w-1 and maximum external quantum efficiencies (eqe) of 12.1-17.3%, which were superior than the (bt)(2)ir(acac)-based device (28.4 cd a(-1), 19.9 lm w-1, 9.8%). after reducing the hole-injecting barrier and using better carrier-transporting materials in the optimized device ii, ito/moo3/tapc/tcta/cbp:dopants/tmpypb/lif/al, all the four devices exhibited lower turn-on voltages of 2.9-3.1 v and excellent performance with maximum eqe over 20%. as a result, they showed high power efficiencies in the range of 55.9-83.2 lm w-1. among the four optimized devices, the (4-f-bt)(2)ir(acac)-based device achieved the highest power efficiency of 83.2 lm w-1. remarkably, the (bt)(2)ir(acac)-based device still possessed high current efficiency of 53.5 cd a(-1), power efficiency of 23 lm w-1, and eqe of 19.6% at extremely high luminance of 10 000 cd m(-2). |
收录类别 | SCI收录期刊论文 |
语种 | 英语 |
WOS记录号 | WOS:000330162600041 |
公开日期 | 2014-04-15 |
内容类型 | 期刊论文 |
源URL | [http://ir.ciac.jl.cn/handle/322003/49608] ![]() |
专题 | 长春应用化学研究所_长春应用化学研究所知识产出_期刊论文 |
推荐引用方式 GB/T 7714 | Fan C,Zhu LP,Jiang B,et al. High Power Efficiency Yellow Phosphorescent OLEDs by Using New Iridium Complexes with Halogen-Substituted 2-Phenylbenzo[d]thiazole Ligands[J]. journal of physical chemistry c,2013,117(37):19134-19141. |
APA | Fan C.,Zhu LP.,Jiang B.,Li YF.,Zhao FC.,...&Yang CL.(2013).High Power Efficiency Yellow Phosphorescent OLEDs by Using New Iridium Complexes with Halogen-Substituted 2-Phenylbenzo[d]thiazole Ligands.journal of physical chemistry c,117(37),19134-19141. |
MLA | Fan C,et al."High Power Efficiency Yellow Phosphorescent OLEDs by Using New Iridium Complexes with Halogen-Substituted 2-Phenylbenzo[d]thiazole Ligands".journal of physical chemistry c 117.37(2013):19134-19141. |
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