Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth

	Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth
	Feng, Mei-Xin ; Liu, Jian-Ping ; Zhang, Shu-Ming ; Jiang, De-Sheng ; Li, Zeng-Cheng ; Zhou, Kun ; Li, De-Yao ; Zhang, Li-Qun ; Wang, Feng ; Wang, Hui ; Chen, Ping ; Liu, Zong-Shun ; Zhao, De-Gang ; Sun, Qian ; Yang, Hui
刊名	ieee photonics technology letters
	2013
卷号	25 期号:24 页码:2401-2404
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2014-04-09
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24730]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	Feng, Mei-Xin,Liu, Jian-Ping,Zhang, Shu-Ming,et al. Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth[J]. ieee photonics technology letters,2013,25(24):2401-2404.
APA	Feng, Mei-Xin.,Liu, Jian-Ping.,Zhang, Shu-Ming.,Jiang, De-Sheng.,Li, Zeng-Cheng.,...&Yang, Hui.(2013).Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth.ieee photonics technology letters,25(24),2401-2404.
MLA	Feng, Mei-Xin,et al."Performance Enhancement of GaN-Based Laser Diodes With Prestrained Growth".ieee photonics technology letters 25.24(2013):2401-2404.