Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001) SiO2 interface

	Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001) SiO2 interface
	Liu Zheng, Guosheng Sun, Feng Zhang, Shengbei Liu , Bin Liu , Lin Dong, Lei Wang, Wanshun Zhao, Xingfang Liu , Guoguo Yan , Lixin Tian ,Yiping Zeng
刊名	applied surface science
	2013
卷号	280 页码:500–503
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2014-03-26
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24567]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Liu Zheng, Guosheng Sun, Feng Zhang, Shengbei Liu , Bin Liu , Lin Dong, Lei Wang, Wanshun Zhao, Xingfang Liu , Guoguo Yan , Lixin Tian ,Yiping Zeng. Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001) SiO2 interface[J]. applied surface science,2013,280:500–503.
APA	Liu Zheng, Guosheng Sun, Feng Zhang, Shengbei Liu , Bin Liu , Lin Dong, Lei Wang, Wanshun Zhao, Xingfang Liu , Guoguo Yan , Lixin Tian ,Yiping Zeng.(2013).Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001) SiO2 interface.applied surface science,280,500–503.
MLA	Liu Zheng, Guosheng Sun, Feng Zhang, Shengbei Liu , Bin Liu , Lin Dong, Lei Wang, Wanshun Zhao, Xingfang Liu , Guoguo Yan , Lixin Tian ,Yiping Zeng."Ab initio theoretical and photoemission studies on formation of 4H-SiC(0001) SiO2 interface".applied surface science 280(2013):500–503.