High sensitivity Hall devices with AlSb InAs quantum well structures | |
Zhang Yang, Zhang Yu-Wei, Wang Cheng-Yan, Guan Min, Cui Li-Jie, Li Yi-Yang, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping | |
刊名 | chinese physics b |
2013 | |
卷号 | 22期号:5页码:7106 |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2014-03-19 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/24559] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Zhang Yang, Zhang Yu-Wei, Wang Cheng-Yan, Guan Min, Cui Li-Jie, Li Yi-Yang, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping. High sensitivity Hall devices with AlSb InAs quantum well structures[J]. chinese physics b,2013,22(5):7106. |
APA | Zhang Yang, Zhang Yu-Wei, Wang Cheng-Yan, Guan Min, Cui Li-Jie, Li Yi-Yang, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping.(2013).High sensitivity Hall devices with AlSb InAs quantum well structures.chinese physics b,22(5),7106. |
MLA | Zhang Yang, Zhang Yu-Wei, Wang Cheng-Yan, Guan Min, Cui Li-Jie, Li Yi-Yang, Wang Bao-Qiang, Zhu Zhan-Ping, Zeng Yi-Ping."High sensitivity Hall devices with AlSb InAs quantum well structures".chinese physics b 22.5(2013):7106. |
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