Growth of topological crystalline insulator SnTe thin films on Si(111). substrate by molecular beam epitaxy

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	Growth of topological crystalline insulator SnTe thin films on Si(111). substrate by molecular beam epitaxy
	C. H. Yan ; H. Guo ; J. Wen ; Z. D. Zhang ; L. L. Wang ; K. He ; X. C. Ma ; S. H. Ji ; X. Chen ; Q. K. Xue
刊名	Surface Science
	2014
卷号	621 页码:104-108
关键词	Topological crystalline insulator Electronic structure Molecular beam epitaxy Scanning tunneling microscopy Angle-resolved photoemission spectroscopy experimental realization bi2se3 bi2te3 phase
ISSN号	0039-6028
原文出处	://WOS:000330909300015
语种	英语
公开日期	2014-03-14
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/72503]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	C. H. Yan,H. Guo,J. Wen,et al. Growth of topological crystalline insulator SnTe thin films on Si(111). substrate by molecular beam epitaxy[J]. Surface Science,2014,621:104-108.
APA	C. H. Yan.,H. Guo.,J. Wen.,Z. D. Zhang.,L. L. Wang.,...&Q. K. Xue.(2014).Growth of topological crystalline insulator SnTe thin films on Si(111). substrate by molecular beam epitaxy.Surface Science,621,104-108.
MLA	C. H. Yan,et al."Growth of topological crystalline insulator SnTe thin films on Si(111). substrate by molecular beam epitaxy".Surface Science 621(2014):104-108.