In-plane optical anisotropy induced by asymmetrically δ-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy

	In-plane optical anisotropy induced by asymmetrically δ-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy
	J. L. Yu, Y. H. Chen, X. Bo, C. Y. Jiang, X. L. Ye, S. J. Wu, H. S. Gao
刊名	Journal of Applied Physics
	2013
卷号	113 期号:8 页码:083504- 083504-5
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2014-02-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/24488]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	J. L. Yu, Y. H. Chen, X. Bo, C. Y. Jiang, X. L. Ye, S. J. Wu, H. S. Gao. In-plane optical anisotropy induced by asymmetrically δ-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy[J]. Journal of Applied Physics,2013,113(8):083504- 083504-5.
APA	J. L. Yu, Y. H. Chen, X. Bo, C. Y. Jiang, X. L. Ye, S. J. Wu, H. S. Gao.(2013).In-plane optical anisotropy induced by asymmetrically δ-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy.Journal of Applied Physics,113(8),083504- 083504-5.
MLA	J. L. Yu, Y. H. Chen, X. Bo, C. Y. Jiang, X. L. Ye, S. J. Wu, H. S. Gao."In-plane optical anisotropy induced by asymmetrically δ-doping in (001) GaAs/AlGaAs quantum wells studied by reflectance difference spectroscopy".Journal of Applied Physics 113.8(2013):083504- 083504-5.