Strong localization across the metal-insulator transition at the Ag/Si(111)-(root 3 x root 3)R30 degrees interface

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	Strong localization across the metal-insulator transition at the Ag/Si(111)-(root 3 x root 3)R30 degrees interface
	Tang, YY ; Guo, JD
刊名	FRONTIERS OF PHYSICS
	2013
卷号	8 期号:1 页码:44
关键词	surface conductivity metal-insulator transition localization scanning tunneling microscopy
ISSN号	2095-0462
通讯作者	Tang, YY (reprint author), Chinese Acad Sci, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要	We present the temperature dependent electrical transport measurements of Ag/Si(111)-(ae3 x ae3)R30A degrees by the in situ micro-four-point probe method integrated with scanning tunneling microscopy. The surface structure characterizations show hexagonal patterns at room temperature, which supports the inequivalent triangle (IET) model. A metal-insulator transition occurs at similar to 115 K.The lowtemperature transportmeasurements clearly reveal the strong localization characteristics of the insulating phase.
资助信息	National Basic Research Program of China (973 Program) [2012CB921700]; Specific Funding of Discipline and Graduate Education Project of Beijing Municipal Commission of Education
语种	英语
公开日期	2014-01-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/57482]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Tang, YY,Guo, JD. Strong localization across the metal-insulator transition at the Ag/Si(111)-(root 3 x root 3)R30 degrees interface[J]. FRONTIERS OF PHYSICS,2013,8(1):44.
APA	Tang, YY,&Guo, JD.(2013).Strong localization across the metal-insulator transition at the Ag/Si(111)-(root 3 x root 3)R30 degrees interface.FRONTIERS OF PHYSICS,8(1),44.
MLA	Tang, YY,et al."Strong localization across the metal-insulator transition at the Ag/Si(111)-(root 3 x root 3)R30 degrees interface".FRONTIERS OF PHYSICS 8.1(2013):44.