Robust topological insulator conduction under strong boundary disorder

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	Robust topological insulator conduction under strong boundary disorder
	Wu, QS ; Du, L ; Sacksteder, VE
刊名	PHYSICAL REVIEW B
	2013
卷号	88 期号:4
ISSN号	1098-0121
通讯作者	Wu, QS (reprint author), Chinese Acad Sci, Inst Phys, Beijing 100190, Peoples R China.
中文摘要	Topological insulators are characterized by specially protected conduction on their outer boundaries. We show that the protected edge conduction exhibited by 2D topological insulators (and also Chern insulators) is independent of nonmagnetic boundary disorder. In particular, the edge states residing inside the bulk gap remain conducting even when edge-state inhomogeneities destroy the characteristic linear Dirac relation between energy and momentum. The main effects of boundary disorder on the in-gap states are to decrease the Fermi velocity, increase the density of states, pull the states into the disordered region if spin is conserved, and at very large disorder shift the states to the boundary between the disordered edge and the clean bulk. These effects, which may be useful for device engineering, are controlled by a resonance between the disordered edge and the bulk bands. The resonance's energy is set by the bulk band width; protection of the in-gap edge states' plane-wave character is controlled by the bulk band width, not the bulk band gap.
资助信息	National Science Foundation of China; 973 program of China [2011CBA00108]
语种	英语
公开日期	2014-01-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/57412]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wu, QS,Du, L,Sacksteder, VE. Robust topological insulator conduction under strong boundary disorder[J]. PHYSICAL REVIEW B,2013,88(4).
APA	Wu, QS,Du, L,&Sacksteder, VE.(2013).Robust topological insulator conduction under strong boundary disorder.PHYSICAL REVIEW B,88(4).
MLA	Wu, QS,et al."Robust topological insulator conduction under strong boundary disorder".PHYSICAL REVIEW B 88.4(2013).