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Experimental identification of p-type conduction in fluoridized boron nitride nanotube
Zhao, J ; Li, WX ; Tang, CC ; Li, L ; Lin, J ; Gu, CZ
刊名APPLIED PHYSICS LETTERS
2013
卷号102期号:15
ISSN号0003-6951
通讯作者Li, WX (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要The transport properties of F-doped boron nitride nanotube (BNNT) top-gate field effect devices were investigated to demonstrate the realization of p-type BNNTs by F-doping. The drain current was found to increase substantially with the applied negative gate voltage, suggesting these devices persist significant field effect with holes predominated; it also suggests that F-doping remarkably modified the band gap with F atoms preferred to be absorbed on B sites. Parameters, including the resistivity, charge concentration, and mobility, were further retrieved from the I-V curves. Our results indicate that device characterization is an effective method to reveal the specific properties of BNNTs. (C) 2013 AIP Publishing LLC [http://dx.doi.org/10.1063/1.4802884]
资助信息Outstanding Technical Talent Program of the Chinese Academy of Sciences; National Natural Science Foundation of China [91123004, 11104334, 50825206, 10834012, 60801043, 10974041, 51172060]; National Basic Research Program (973) of China [2009CB930502, 2011CB612301]
语种英语
公开日期2014-01-16
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/56985]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Zhao, J,Li, WX,Tang, CC,et al. Experimental identification of p-type conduction in fluoridized boron nitride nanotube[J]. APPLIED PHYSICS LETTERS,2013,102(15).
APA Zhao, J,Li, WX,Tang, CC,Li, L,Lin, J,&Gu, CZ.(2013).Experimental identification of p-type conduction in fluoridized boron nitride nanotube.APPLIED PHYSICS LETTERS,102(15).
MLA Zhao, J,et al."Experimental identification of p-type conduction in fluoridized boron nitride nanotube".APPLIED PHYSICS LETTERS 102.15(2013).
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