Effects of nitrogen partial pressure in Ta-N films grown by the cathodic vacuum arc technique

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	Effects of nitrogen partial pressure in Ta-N films grown by the cathodic vacuum arc technique
	Li, L ; Lv, GH ; Yang, SZ
刊名	JOURNAL OF PHYSICS D-APPLIED PHYSICS
	2013
卷号	46 期号:28
ISSN号	0022-3727
通讯作者	Li, L (reprint author), Civil Aviat Univ China, Coll Sci, Tianjin 300300, Peoples R China.
中文摘要	Ta-N films were prepared by the cathodic vacuum arc technique in Ar + N-2 atmosphere with various nitrogen partial pressures (f(N2) = 0-100%). The crystal structure, chemical composition, surface morphology and cross-section morphology of the Ta-N films were investigated by x-ray diffraction, x-ray photoelectron spectroscopy, scanning electron microscopy and atomic force microscopy. The influence of nitrogen partial pressure on the material characteristics of the Ta-N film was systematically studied. Our results suggest that the structural and morphological properties of the Ta-N films have a strong dependence on the nitrogen partial pressure. With increasing nitrogen partial pressure from 0% to 100%, the phase composition of the films evolves from single tetragonal Ta to cubic TaN and then to multi-phase cubic TaN + monoclinic Ta3N5. And the crystallographic orientation of the main phase component, cubic TaN, develops from (1 1 1) preferred orientation to (2 0 0) preferred orientation. The N/Ta ratio of the films does not increase linearly with nitrogen partial pressure, and nearly reaches 1 : 1 at a nitrogen partial pressure of 65%. The deposition rate is found to decrease almost linearly with increasing nitrogen partial pressure. Macroparticles can be observed without using a magnetic filter, the amount of which can be significantly reduced by increasing the nitrogen partial pressure. And the smooth surface of the films is composed of nano-crystallites, while the grain size seems to increase as a function of the nitrogen partial pressure.
资助信息	Fundamental Research Funds for the Central Universities [ZXH2010D021]; Civil Aviation University of China [09-CAUC-S01]; Basic Operational Outlays for the Research Activities of Centric University, Civil Aviation University of China [ZXH2012K006]
语种	英语
公开日期	2014-01-16
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/56934]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Li, L,Lv, GH,Yang, SZ. Effects of nitrogen partial pressure in Ta-N films grown by the cathodic vacuum arc technique[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS,2013,46(28).
APA	Li, L,Lv, GH,&Yang, SZ.(2013).Effects of nitrogen partial pressure in Ta-N films grown by the cathodic vacuum arc technique.JOURNAL OF PHYSICS D-APPLIED PHYSICS,46(28).
MLA	Li, L,et al."Effects of nitrogen partial pressure in Ta-N films grown by the cathodic vacuum arc technique".JOURNAL OF PHYSICS D-APPLIED PHYSICS 46.28(2013).