Structure, stability and photoelectronic properties of transition films from amorphous to microcrystalline silicon

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	Structure, stability and photoelectronic properties of transition films from amorphous to microcrystalline silicon
	Hao, HY ; Liao, XB ; Zeng, XB ; Diao, HW ; Xu, Y ; Kong, GL
刊名	JOURNAL OF CRYSTAL GROWTH
	2005
卷号	281 期号:2-3 页码:344
关键词	OPEN-CIRCUIT VOLTAGE SOLAR-CELLS
ISSN号	0022-0248
通讯作者	Hao, HY (reprint author), Chinese Acad Sci, Inst Semicond, State Lab Surface Phys, Beijing 100083, Peoples R China.
中文摘要	A series of hydrogenated silicon films near the threshold of crystallinity was prepared by very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) from a mixture of SiH4 diluted in H, The effect of hydrogen dilution ratios R-H = [H-2]/[SiH4] on microstructure of the films was investigated. Photoelectronic properties and stability of the films were studied as a function of crystalline fraction. The results show that more the crystalline volume fraction in the silicon films, the higher mobility life-time product (mu tau), better the stability and lower the photosensitivity. Those diphasic films contained 8%-31% crystalline volume fraction can gain both the fine photoelectronic properties and high stability. in the diphasic (contained 12% crystalline volume fraction) solar cell, we obtained a much lower light-induced degradation of similar to 2.9%, with a high initial efficiency of 10.01% and a stabilized efficiency of 9.72% (AM1.5, 100 mW/cm(2)). (c) 2005 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/53638]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Hao, HY,Liao, XB,Zeng, XB,et al. Structure, stability and photoelectronic properties of transition films from amorphous to microcrystalline silicon[J]. JOURNAL OF CRYSTAL GROWTH,2005,281(2-3):344.
APA	Hao, HY,Liao, XB,Zeng, XB,Diao, HW,Xu, Y,&Kong, GL.(2005).Structure, stability and photoelectronic properties of transition films from amorphous to microcrystalline silicon.JOURNAL OF CRYSTAL GROWTH,281(2-3),344.
MLA	Hao, HY,et al."Structure, stability and photoelectronic properties of transition films from amorphous to microcrystalline silicon".JOURNAL OF CRYSTAL GROWTH 281.2-3(2005):344.