Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step

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	Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step
	Jiang, ZW ; Wang, WX ; Gao, HC ; Liu, LS ; Chen, H ; Zhou, JM
刊名	APPLIED SURFACE SCIENCE
	2008
卷号	254 期号:16 页码:5241
关键词	MOLECULAR-BEAM EPITAXY X-RAY-DIFFRACTION DISLOCATION-STRUCTURE GRADED BUFFER QUANTUM-WELL LAYERS GAAS INXGA1-XAS EPILAYERS GROWTH
ISSN号	0169-4332
通讯作者	Jiang, ZW (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要	Low-temperature step-graded high indium content InAlAs (In% = 0.75) metamorphic buffer layers with reverse step layer grown on GaAs substrate by molecular beam epitaxy are investigated in this paper. The composition and the strain relaxation of the top InAlAs layer are determined by high-resolution triple-axis X-ray diffraction measurements, which show that the top InAlAs layer is nearly fully relaxed and the growth parameters for these samples have little influence on the strain relaxation ratio. Surface morphology is observed by reflection high-energy electron diffraction pattern and atomic force microscopy. The surface morphology is found to depend strongly on both the growth temperature and the As flux. Compared with other samples, the sample growth under the optimized conditions has the smallest value of root mean square surface roughness. Furthermore, the omega - 2 theta and omega scans of the triple-axis X-ray diffraction and transmission electron microscopy result also show the sample grown under the optimized conditions has good crystalline quality. (C) 2008 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/53111]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Jiang, ZW,Wang, WX,Gao, HC,et al. Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step[J]. APPLIED SURFACE SCIENCE,2008,254(16):5241.
APA	Jiang, ZW,Wang, WX,Gao, HC,Liu, LS,Chen, H,&Zhou, JM.(2008).Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step.APPLIED SURFACE SCIENCE,254(16),5241.
MLA	Jiang, ZW,et al."Strain relaxation and surface morphology of high indium content InAlAs metamorphic buffers with reverse step".APPLIED SURFACE SCIENCE 254.16(2008):5241.