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Preparation and microstructure of tantalum nitride thin film by cathodic arc deposition
Li, L ; Niu, EW ; Lv, GH ; Feng, WR ; Gu, WC ; Chen, GL ; Zhang, GL ; Fan, SH ; Liu, CZ ; Yang, SZ
刊名CHINESE PHYSICS LETTERS
2006
卷号23期号:11页码:3018
关键词BEAM-ASSISTED DEPOSITION DIFFUSION BARRIER TAN METALLIZATION IMPLANTATION COPPER CU
ISSN号0256-307X
通讯作者Li, L (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China.
中文摘要Tantalum nitride (TaN) thin films are achieved on Si(111) and SS317L substrates by catholic vaccum arc technique, which is rarely reported in the literature. The crystal structure, composition and surface morphology of the films are characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), auger electron spectroscopy, and atomic force microscopy, respectively. The influence of substrate negative bias on crystal structure, composition, surface morphology of the TaN films is systematically studied. At the substrate bias of 0V and -50V, the amorphous TaN film is obtained. As the bias increases to -100V, cubic TaN phase can be found. Stoichiometric TaN with hexagonal lattice preferred (300) orientation is prepared at a bias of -200V. Combine the XRD and XPS results, the binding energy value of 23.6eV of Ta 4f(7/2) is contributed to hexagonal TaN. Compared to other techniques, TaN thin films fabricated by cathodic vaccum arc at various substrate biases show different microstructures.
收录类别SCI
语种英语
公开日期2013-09-24
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/51281]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Li, L,Niu, EW,Lv, GH,et al. Preparation and microstructure of tantalum nitride thin film by cathodic arc deposition[J]. CHINESE PHYSICS LETTERS,2006,23(11):3018.
APA Li, L.,Niu, EW.,Lv, GH.,Feng, WR.,Gu, WC.,...&Yang, SZ.(2006).Preparation and microstructure of tantalum nitride thin film by cathodic arc deposition.CHINESE PHYSICS LETTERS,23(11),3018.
MLA Li, L,et al."Preparation and microstructure of tantalum nitride thin film by cathodic arc deposition".CHINESE PHYSICS LETTERS 23.11(2006):3018.
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