Preparation and microstructure of tantalum nitride thin film by cathodic arc deposition | |
Li, L ; Niu, EW ; Lv, GH ; Feng, WR ; Gu, WC ; Chen, GL ; Zhang, GL ; Fan, SH ; Liu, CZ ; Yang, SZ | |
刊名 | CHINESE PHYSICS LETTERS |
2006 | |
卷号 | 23期号:11页码:3018 |
关键词 | BEAM-ASSISTED DEPOSITION DIFFUSION BARRIER TAN METALLIZATION IMPLANTATION COPPER CU |
ISSN号 | 0256-307X |
通讯作者 | Li, L (reprint author), Chinese Acad Sci, Inst Phys, POB 603, Beijing 100080, Peoples R China. |
中文摘要 | Tantalum nitride (TaN) thin films are achieved on Si(111) and SS317L substrates by catholic vaccum arc technique, which is rarely reported in the literature. The crystal structure, composition and surface morphology of the films are characterized by x-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS), auger electron spectroscopy, and atomic force microscopy, respectively. The influence of substrate negative bias on crystal structure, composition, surface morphology of the TaN films is systematically studied. At the substrate bias of 0V and -50V, the amorphous TaN film is obtained. As the bias increases to -100V, cubic TaN phase can be found. Stoichiometric TaN with hexagonal lattice preferred (300) orientation is prepared at a bias of -200V. Combine the XRD and XPS results, the binding energy value of 23.6eV of Ta 4f(7/2) is contributed to hexagonal TaN. Compared to other techniques, TaN thin films fabricated by cathodic vaccum arc at various substrate biases show different microstructures. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-24 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/51281] |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Li, L,Niu, EW,Lv, GH,et al. Preparation and microstructure of tantalum nitride thin film by cathodic arc deposition[J]. CHINESE PHYSICS LETTERS,2006,23(11):3018. |
APA | Li, L.,Niu, EW.,Lv, GH.,Feng, WR.,Gu, WC.,...&Yang, SZ.(2006).Preparation and microstructure of tantalum nitride thin film by cathodic arc deposition.CHINESE PHYSICS LETTERS,23(11),3018. |
MLA | Li, L,et al."Preparation and microstructure of tantalum nitride thin film by cathodic arc deposition".CHINESE PHYSICS LETTERS 23.11(2006):3018. |
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