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Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires
Zeng, XB ; Liao, XB ; Dai, ST ; Wang, B ; Xu, YY ; Xiang, XB ; Hu, ZH ; Diao, HW ; Kong, GL
刊名Science and Technology of Nanomaterials - ICMAT 2003
2005
卷号23页码:137
关键词VISIBLE PHOTOLUMINESCENCE POROUS SILICON AMORPHOUS-SILICON SI SPECTROSCOPY FILMS NANOSTRUCTURES CONFINEMENT GROWTH
ISSN号1422-6375
通讯作者Zeng, XB (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China.
中文摘要We have investigated the crystal structure, magnetization and magnetoresistance of the double perovskite compounds Sr-2(Fe1-xVx)MoO6(0less than or equal to xless than or equal to 0.1). The lattice constants and the cation ordering decrease monotonously with the V content. The Curie temperature, saturation magnetization and low field magnetoresistance of the compounds decrease with increasing x due to the reduced degree of ordering. The resistivity of Sr2FeMoO6 and lightly doped samples shows semiconductive behavior, while the samples with higher doping levels exhibit a semiconductor-metal transition around 80 K. (C) 2004 Elsevier Ltd. All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-24
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/50937]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Zeng, XB,Liao, XB,Dai, ST,et al. Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires[J]. Science and Technology of Nanomaterials - ICMAT 2003,2005,23:137.
APA Zeng, XB.,Liao, XB.,Dai, ST.,Wang, B.,Xu, YY.,...&Kong, GL.(2005).Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires.Science and Technology of Nanomaterials - ICMAT 2003,23,137.
MLA Zeng, XB,et al."Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires".Science and Technology of Nanomaterials - ICMAT 2003 23(2005):137.
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