Numerical analysis of the transport processes in manganite-titanate Schottky junctions

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	Numerical analysis of the transport processes in manganite-titanate Schottky junctions
	Han, P ; Jia, JF ; He, M
刊名	APPLIED SURFACE SCIENCE
	2009
卷号	255 期号:12 页码:6262
关键词	NB-DOPED SRTIO3 BARRIER DIODES HETEROJUNCTION PROPERTY
ISSN号	0169-4332
通讯作者	Han, P (reprint author), Tsinghua Univ, Dept Phys, Beijing 100084, Peoples R China.
中文摘要	A numerical study is presented on the transport processes in the manganite-titanate Schottky junction by using the Poisson equation, the drift-diffusion formulas, the direct and thermally assisted tunneling model. Comparing with the experimental data, it is found that the non-monotonically temperature-dependent I-V curves under reverse bias is caused by the competition between the direct and thermally assisted tunneling processes. In addition, it is also found that the electric field dependence of the permittivity in Nb-doped SrTiO(3) plays an important role on the transport properties of the manganite titanate Schottky junctions based on our calculation. (C) 2009 Elsevier B.V. All rights reserved.
收录类别	SCI
语种	英语
公开日期	2013-09-24
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/50077]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Han, P,Jia, JF,He, M. Numerical analysis of the transport processes in manganite-titanate Schottky junctions[J]. APPLIED SURFACE SCIENCE,2009,255(12):6262.
APA	Han, P,Jia, JF,&He, M.(2009).Numerical analysis of the transport processes in manganite-titanate Schottky junctions.APPLIED SURFACE SCIENCE,255(12),6262.
MLA	Han, P,et al."Numerical analysis of the transport processes in manganite-titanate Schottky junctions".APPLIED SURFACE SCIENCE 255.12(2009):6262.