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Van der Pauw Hall Measurement on Intended Doped ZnO Films for p-Type Conductivity
Guo, Y ; Liu, YP ; Li, JQ ; Zhang, SL ; Mei, ZX ; Du, XL
刊名CHINESE PHYSICS LETTERS
2010
卷号27期号:6
关键词PHOTOCONDUCTIVITY SEMICONDUCTORS NITROGEN LITHIUM
ISSN号0256-307X
通讯作者Guo, Y (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China.
中文摘要A Van der Pauw Hall measurement is performed on the intended doped ZnO films (Na doped ZnO) grown by using the molecular beam epitaxial method. All as-grown samples show n-type conductivity, whereas the annealed samples (annealing temperature 900 degrees C) show ambiguous carrier conductivity type (n- and p-type) in the automatic Van der Pauw Hall measurement. A similar result has been observed in Li doped ZnO and in as-doped ZnO films by other groups before. However, by tracing the Hall voltage in the Van der Pauw Hall measurement, it is found that this alternative appearance of both n- and p-type conductivity is not intrinsic behavior of the intended doped ZnO films, but is due to the persistent photoconductivity effect in ZnO. The persistent photoconductivity effect would strongly affect the accurate determination of the carrier conductivity type of a highly resistive intended doped ZnO sample.
收录类别SCI
资助信息National Natural Science Foundation of China [50532090, 10804126, 10604007, 60606023, 60621091]; National Basic Research Program of China [2007CB936203, 2009CB929400]
语种英语
公开日期2013-09-23
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/46493]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Guo, Y,Liu, YP,Li, JQ,et al. Van der Pauw Hall Measurement on Intended Doped ZnO Films for p-Type Conductivity[J]. CHINESE PHYSICS LETTERS,2010,27(6).
APA Guo, Y,Liu, YP,Li, JQ,Zhang, SL,Mei, ZX,&Du, XL.(2010).Van der Pauw Hall Measurement on Intended Doped ZnO Films for p-Type Conductivity.CHINESE PHYSICS LETTERS,27(6).
MLA Guo, Y,et al."Van der Pauw Hall Measurement on Intended Doped ZnO Films for p-Type Conductivity".CHINESE PHYSICS LETTERS 27.6(2010).
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