Ultraviolet photovoltaic characteristic of MgB2 thin film | |
Zhao, SQ ; Zhou, YL ; Zhao, K ; Wang, SF ; Chen, ZH ; Lu, HB ; Jin, KJ ; Cheng, BL ; Yang, GZ | |
刊名 | CHINESE PHYSICS |
2006 | |
卷号 | 15期号:4页码:839 |
关键词 | BA-CU-O SUPERCONDUCTING MGB2 DEPOSITION GROWTH |
ISSN号 | 1009-1963 |
通讯作者 | Zhao, SQ (reprint author), Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, POB 603, Beijing 100080, Peoples R China. |
中文摘要 | Fast photoelectric effects have been observed in MgB2 thin film fabricated by chemical vapour deposition. The rise time was similar to 10 ns and the full width at half-maxinium was similar to 185 ns for the photovoltaic pulse when the film was irradiated by a 308 nm laser pulse of 25 ns in duration. X-ray diffraction and the scanning electron microscope revealed that the film was polycrystalline with preferred c-axis orientation. We propose that nonequilibrium electron-hole pairs are excited in the grains and grain boundary regions for MgB2 film under ultraviolet laser and then the built-in electric field near the grain boundaries separates carriers, which lead to the appearance of an instant photovoltage. |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2013-09-23 |
内容类型 | 期刊论文 |
源URL | [http://ir.iphy.ac.cn/handle/311004/46372] |
专题 | 物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文 |
推荐引用方式 GB/T 7714 | Zhao, SQ,Zhou, YL,Zhao, K,et al. Ultraviolet photovoltaic characteristic of MgB2 thin film[J]. CHINESE PHYSICS,2006,15(4):839. |
APA | Zhao, SQ.,Zhou, YL.,Zhao, K.,Wang, SF.,Chen, ZH.,...&Yang, GZ.(2006).Ultraviolet photovoltaic characteristic of MgB2 thin film.CHINESE PHYSICS,15(4),839. |
MLA | Zhao, SQ,et al."Ultraviolet photovoltaic characteristic of MgB2 thin film".CHINESE PHYSICS 15.4(2006):839. |
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