Tunable rectification and giant positive magnetoresistance in Ge1-xMnx/Ge epitaxial heterojunction diodes

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	Tunable rectification and giant positive magnetoresistance in Ge1-xMnx/Ge epitaxial heterojunction diodes
	Tian, YF ; Deng, JX ; Yan, SS ; Dai, YY ; Zhao, MW ; Chen, YX ; Liu, GL ; Mei, LM ; Liu, ZY ; Sun, JR
刊名	JOURNAL OF APPLIED PHYSICS
	2010
卷号	107 期号:2
关键词	NB-DOPED SRTIO3
ISSN号	0021-8979
通讯作者	Yan, SS (reprint author), Shandong Univ, Sch Phys, Jinan 250100, Shandong, Peoples R China.
中文摘要	Ge1-xMnx/Ge single-crystal heterojunction diodes with p-type Ge1-xMnx ferromagnetic semiconductor were grown, respectively on Ge substrates of p-type, n-type, and intrinsic semiconductors by molecular beam epitaxy. The I-V curve of the p-Ge0.95Mn0.05/intrinsic-Ge diode can be greatly tuned by a magnetic field, which was indicated by a large positive magnetoresistance. The magnetoresistance shows a peak value of 700% under a +2 V bias voltage around the Curie temperature of 225 K of the Ge0.95Mn0.05 magnetic semiconductor, and it remains as high as 440% at room temperature. The origin of the positive magnetoresistance is discussed.
收录类别	SCI
资助信息	National Basic Research Program of China [2007CB924903, 2009CB929202]; NSF [10974120]
语种	英语
公开日期	2013-09-23
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/46177]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Tian, YF,Deng, JX,Yan, SS,et al. Tunable rectification and giant positive magnetoresistance in Ge1-xMnx/Ge epitaxial heterojunction diodes[J]. JOURNAL OF APPLIED PHYSICS,2010,107(2).
APA	Tian, YF.,Deng, JX.,Yan, SS.,Dai, YY.,Zhao, MW.,...&Sun, JR.(2010).Tunable rectification and giant positive magnetoresistance in Ge1-xMnx/Ge epitaxial heterojunction diodes.JOURNAL OF APPLIED PHYSICS,107(2).
MLA	Tian, YF,et al."Tunable rectification and giant positive magnetoresistance in Ge1-xMnx/Ge epitaxial heterojunction diodes".JOURNAL OF APPLIED PHYSICS 107.2(2010).