Transport properties of topological insulator Bi2Se3 thin films in tilted magnetic fields

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	Transport properties of topological insulator Bi2Se3 thin films in tilted magnetic fields
	Wang, XX ; He, XY ; Guan, T ; Liao, J ; Lin, CJ ; Wu, KH ; Li, YQ ; Zeng, CG
刊名	PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
	2012
卷号	46 页码:236
关键词	SPIN-ORBIT SCATTERING SINGLE DIRAC CONE QUANTUM OSCILLATIONS SURFACE MAGNETORESISTANCE SYSTEMS BI2TE3
ISSN号	1386-9477
通讯作者	Zeng, CG (reprint author), Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Peoples R China.
中文摘要	We report a systematic study of the electron transport properties of the topological insulator Bi2Se3 thin films with various thicknesses in tilted magnetic fields. The negative magnetoconductivity observed in tilted fields cannot be described as a sum of the contributions from the perpendicular and the parallel magnetic fields. The details of the tilt angle dependencies rule out the possibility of significant Zeeman effects on the low field magnetotransport. Possible mechanisms for the in-plane-field effect are discussed based on the experimental data. (c) 2012 Elsevier B.V. All rights reserved.
收录类别	SCI
资助信息	NSFC [91121003, 91021018, 10974188, 11034006]; NKBRPC [2009CB929502, 20113402110046]; "One-hundred-person project of CAS", SRFDP [20113402110046]
语种	英语
公开日期	2013-09-23
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/46127]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wang, XX,He, XY,Guan, T,et al. Transport properties of topological insulator Bi2Se3 thin films in tilted magnetic fields[J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,2012,46:236.
APA	Wang, XX.,He, XY.,Guan, T.,Liao, J.,Lin, CJ.,...&Zeng, CG.(2012).Transport properties of topological insulator Bi2Se3 thin films in tilted magnetic fields.PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES,46,236.
MLA	Wang, XX,et al."Transport properties of topological insulator Bi2Se3 thin films in tilted magnetic fields".PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES 46(2012):236.