Theoretical study of strain-induced step configuration changes on vicinal Si(001) by the growth of Ge

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	Theoretical study of strain-induced step configuration changes on vicinal Si(001) by the growth of Ge
	Zhang, MH ; Guo, LW ; Huang, Q ; Zhou, JM
刊名	JOURNAL OF PHYSICS-CONDENSED MATTER
	1997
卷号	9 期号:1 页码:53
关键词	SCANNING-TUNNELING-MICROSCOPY SI(100) SURFACE STRESS LAYER
ISSN号	0953-8984
通讯作者	Zhang, MH (reprint author), CHINESE ACAD SCI,INST PHYS,POB 603,BEIJING 100080,PEOPLES R CHINA.
中文摘要	The initial stage of growing Ge on single-domain vicinal Si(001) with a large angle of misorientation has been studied theoretically by the modified Keating model and compared with RHEED and STM experiments. The experimentally observed conversion from the DB step configuration, where all dimer rows are normal to the step edges, to a DA-like step configuration, where dimer rows on one terrace are parallel to the step edges, at Ge coverages larger than 1 ML is identified by our calculations. Our results show that this DA-like step is in fact a pair of steps of single atomic height: SA+SB, with a very wide SA terrace and an SE tooth of about 10 Angstrom. This new step configuration is energetically favoured over DA and DB step configurations.
收录类别	SCI
语种	英语
公开日期	2013-09-23
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/45657]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Zhang, MH,Guo, LW,Huang, Q,et al. Theoretical study of strain-induced step configuration changes on vicinal Si(001) by the growth of Ge[J]. JOURNAL OF PHYSICS-CONDENSED MATTER,1997,9(1):53.
APA	Zhang, MH,Guo, LW,Huang, Q,&Zhou, JM.(1997).Theoretical study of strain-induced step configuration changes on vicinal Si(001) by the growth of Ge.JOURNAL OF PHYSICS-CONDENSED MATTER,9(1),53.
MLA	Zhang, MH,et al."Theoretical study of strain-induced step configuration changes on vicinal Si(001) by the growth of Ge".JOURNAL OF PHYSICS-CONDENSED MATTER 9.1(1997):53.