Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) wafers

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	Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) wafers
	Hao, X ; Chen, YF ; Li, PJ ; Wang, ZG ; Liu, JB ; He, JR ; Fan, R ; Sun, JR ; Zhang, WL ; Li, YR
刊名	CHINESE PHYSICS B
	2012
卷号	21 期号:4
关键词	LARGE-AREA FILMS GAS
ISSN号	1674-1056
通讯作者	Chen, YF (reprint author), Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China.
中文摘要	Epitaxial graphene is synthesized by silicon sublimation from the Si-terminated 6H-SiC substrate. The effects of graphitization temperature on the thickness and surface morphology of epitaxial graphene are investigated. X-ray photoelectron spectroscopy spectra and atomic force microscopy images reveal that the epitaxial graphene thickness increases and the epitaxial graphene roughness decreases with the increase in graphitization temperature. This means that the thickness and roughness of epitaxial graphene films can be modulated by varying the graphitization temperature. In addition, the electrical properties of epitaxial graphene film are also investigated by Hall effect measurement.
收录类别	SCI
资助信息	Program for New Century Excellent Talents in University [NCET-10-0291]; Fundamental Research Funds for the Central Universities [ZYGX2009X005, ZYGX2010J031]; University of Electronic Science and Technology of China [Y02002010301041]; National Natural Science Foundation of China [50832007, 11074285]
语种	英语
公开日期	2013-09-23
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/44782]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Hao, X,Chen, YF,Li, PJ,et al. Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) wafers[J]. CHINESE PHYSICS B,2012,21(4).
APA	Hao, X.,Chen, YF.,Li, PJ.,Wang, ZG.,Liu, JB.,...&Li, YR.(2012).Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) wafers.CHINESE PHYSICS B,21(4).
MLA	Hao, X,et al."Temperature dependence of the thickness and morphology of epitaxial graphene grown on SiC (0001) wafers".CHINESE PHYSICS B 21.4(2012).