High-quality carbon-doped beta-type FeSi2 films synthesized by ion implantation

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	High-quality carbon-doped beta-type FeSi2 films synthesized by ion implantation
	Dong, C ; Li, X ; Nie, D ; Xu, L ; Zhang, Z
刊名	THIN SOLID FILMS
	2004
卷号	461 期号:1 页码:48
关键词	TRANSMISSION ELECTRON-MICROSCOPY EPITAXIAL BETA-FESI2 FILMS PULSED-LASER DEPOSITION BEAM SYNTHESIS THIN-FILMS SEMICONDUCTING BETA-FESI2 BAND-GAP GROWTH SI(100) MICROSTRUCTURE
ISSN号	0040-6090
通讯作者	Dong, C: Dalian Univ Technol, State Key Lab Mat Modificat, Dalian 116024, Peoples R China.
中文摘要	Carbon-doped beta-FeSi2 films synthesized by ion implantation is investigated with the aim to fabricate high-quality semiconducting beta-FeSi2 layer on silicon substrate. According to our TEM cross-section observations, the carbon-doped films are of better quality than the non-doped ones for their improved uniform film thickness, smooth beta/Si interface and high thermal stability. In particular, annealing at 500-700 degreesC leads to the formation of a flat and continuous beta-type silicide layer. Optical absorption measurements show that the carbon doping does not influence the band structure. We further point out that the presence of multiple and incoherent orientation relationships between beta and Si, discussed within the framework of the near coincident site lattice theory, is a key factor responsible for the difficulty in obtaining high-quality epitaxial beta films. (C) 2004 Published by Elsevier B.V.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/39412]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Dong, C,Li, X,Nie, D,et al. High-quality carbon-doped beta-type FeSi2 films synthesized by ion implantation[J]. THIN SOLID FILMS,2004,461(1):48.
APA	Dong, C,Li, X,Nie, D,Xu, L,&Zhang, Z.(2004).High-quality carbon-doped beta-type FeSi2 films synthesized by ion implantation.THIN SOLID FILMS,461(1),48.
MLA	Dong, C,et al."High-quality carbon-doped beta-type FeSi2 films synthesized by ion implantation".THIN SOLID FILMS 461.1(2004):48.