High photoexcited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode

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	High photoexcited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode
	Wang, WP ; Hou, Y ; Xiong, DY ; Li, N ; Lu, W ; Wang, WX ; Chen, H ; Zhou, JM ; Wu, E ; Zeng, HP
刊名	APPLIED PHYSICS LETTERS
	2008
卷号	92 期号:2
ISSN号	0003-6951
中文摘要	We present an approach for the highly sensitive photon detection based on the quantum dots (QDs) operating at temperature of 77 K. The detection structure is based on an AlAs/GaAs/AlAs double barrier resonant tunneling diode combined with a layer of self-assembled InAs QDs (QD-RTD). A photon rate of 115 photons per second had induced 10 nA photocurrent in this structure, corresponding to the photoexcited carrier multiplication factor of 10(7). This high multiplication factor is achieved by the quantum dot induced memory effect and the resonant tunneling tuning effect of QD-RTD structure. (c) 2008 American Institute of Physics.
收录类别	SCI
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/39199]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	Wang, WP,Hou, Y,Xiong, DY,et al. High photoexcited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode[J]. APPLIED PHYSICS LETTERS,2008,92(2).
APA	Wang, WP.,Hou, Y.,Xiong, DY.,Li, N.,Lu, W.,...&Zeng, HP.(2008).High photoexcited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode.APPLIED PHYSICS LETTERS,92(2).
MLA	Wang, WP,et al."High photoexcited carrier multiplication by charged InAs dots in AlAs/GaAs/AlAs resonant tunneling diode".APPLIED PHYSICS LETTERS 92.2(2008).