GETTERING EFFECTS IN BF2-IMPLANTED SI(100) BY ION-BEAM DEFECT ENGINEERING

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	GETTERING EFFECTS IN BF2-IMPLANTED SI(100) BY ION-BEAM DEFECT ENGINEERING
	ZHAO, QT ; WANG, ZL ; CAO, YM ; XU, TB ; ZHU, PR
刊名	JOURNAL OF APPLIED PHYSICS
	1995
卷号	77 期号:10 页码:5014
关键词	IMPLANTED SILICON ANOMALOUS DIFFUSION FLUORINE BORON CRYSTALLINE REDUCTION ENERGY
ISSN号	0021-8979
通讯作者	ZHAO, QT: BEIJING UNIV,INST MICROELECTR,BEIJING 100871,PEOPLES R CHINA.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/38706]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	ZHAO, QT,WANG, ZL,CAO, YM,et al. GETTERING EFFECTS IN BF2-IMPLANTED SI(100) BY ION-BEAM DEFECT ENGINEERING[J]. JOURNAL OF APPLIED PHYSICS,1995,77(10):5014.
APA	ZHAO, QT,WANG, ZL,CAO, YM,XU, TB,&ZHU, PR.(1995).GETTERING EFFECTS IN BF2-IMPLANTED SI(100) BY ION-BEAM DEFECT ENGINEERING.JOURNAL OF APPLIED PHYSICS,77(10),5014.
MLA	ZHAO, QT,et al."GETTERING EFFECTS IN BF2-IMPLANTED SI(100) BY ION-BEAM DEFECT ENGINEERING".JOURNAL OF APPLIED PHYSICS 77.10(1995):5014.