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Gas pressure dependence of composition in Ta-Ti-N films prepared by pulsed high energy density plasma
Feng, WR ; Zhou, H ; Yang, SZ
刊名MATERIALS CHEMISTRY AND PHYSICS
2010
卷号124期号:1页码:287
关键词RAY PHOTOELECTRON-SPECTROSCOPY TITANIUM CARBONITRIDE FILMS BORON-NITRIDE FILMS ROOM-TEMPERATURE DIFFUSION BARRIER THIN-FILMS DEPOSITION MICROSTRUCTURE TANTALUM COATINGS
ISSN号0254-0584
通讯作者Feng, WR: Beijing Inst Petrochem Technol, Dept Mat Sci & Engn, 19 Qingyuan N Rd, Beijing 102617, Peoples R China.
中文摘要Tantalum titanium nitride (Ta-Ti-N) films were deposited on silicon wafer substrates by pulsed high energy density plasma (PHEDP), under different intake gas pressures, ranging from 0.1 to 0.4 MPa. The films were investigated by X-ray photoelectron spectroscopy. Results were analyzed in detail, which reveals that the contents of the metallic elements (Ta and Ti) tend to decrease with pressure, while that of nitrogen increases as expected. With increasing pressure, the films can be denoted as TaTi(3.9)N(2.8), TaTi(4.7)N(6.0), TaTi(2.2)N(8.4) and TaTi(3.1)N1(3.5), respectively. The bonding state of tantalum, titanium, as well as nitrogen was fitted and discussed. Our results demonstrate that almost all the titanium bonded with nitrogen. The Ta-N and Ti-N bonds have equal shares under low gas intake pressure, while the Ti-N bonds prevail under high pressure. The preferential sputtering between the coaxial electrodes should be responsible for this phenomenon. Under low nitrogen pressure, the preferential sputtering is quite significant; while it could be neglected under high pressure. (C) 2010 Elsevier B.V. All rights reserved.
收录类别SCI
语种英语
公开日期2013-09-17
内容类型期刊论文
源URL[http://ir.iphy.ac.cn/handle/311004/38581]  
专题物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式
GB/T 7714
Feng, WR,Zhou, H,Yang, SZ. Gas pressure dependence of composition in Ta-Ti-N films prepared by pulsed high energy density plasma[J]. MATERIALS CHEMISTRY AND PHYSICS,2010,124(1):287.
APA Feng, WR,Zhou, H,&Yang, SZ.(2010).Gas pressure dependence of composition in Ta-Ti-N films prepared by pulsed high energy density plasma.MATERIALS CHEMISTRY AND PHYSICS,124(1),287.
MLA Feng, WR,et al."Gas pressure dependence of composition in Ta-Ti-N films prepared by pulsed high energy density plasma".MATERIALS CHEMISTRY AND PHYSICS 124.1(2010):287.
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