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	EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDY OF GAASXP1-X SEMICONDUCTING RANDOM SOLID-SOLUTIONS
	WU, ZH ; LU, KQ ; WANG, YR ; DONG, J ; Li, HF ; LI, CX ; Fang, ZZ
刊名	PHYSICAL REVIEW B
	1993
卷号	48期号:12页码:8694
关键词	LOCAL-STRUCTURE ALLOYS STANDARDS RANGE
ISSN号	0163-1829
通讯作者	WU, ZH: CHINESE ACAD SCI,INST PHYS,BEIJING 100080,PEOPLES R CHINA.
中文摘要	The extended x-ray-absorption fine-structure (EXAFS) technique is employed to probe the local atomic structure of the III-V pseudobinary solid solutions GaAsxP1-x as a function of the composition. The first- and second-neighbor bond lengths as well as their variation with the composition are reported. The results imply that the local atomic structure is distorted. Both first-neighbor bond lengths and cation-cation bond lengths exhibit a bimodal structure, showing a tendency to retain the values of pure compounds. Anion-anion bond lengths are much closer to those predicted by Vegard's law; however they still show a significant deviation from it. On the basis of this result, the authors propose that the atomic-scale structure of these compounds can be described by a random distribution of five special coordination tetrahedra. The relation between local atomic structure and EXAFS as well as x-ray-diffraction results is discussed.
收录类别	SCI
语种	英语
公开日期	2013-09-17
内容类型	期刊论文
源URL	[http://ir.iphy.ac.cn/handle/311004/37846]
专题	物理研究所_物理所公开发表论文_物理所公开发表论文_期刊论文
推荐引用方式 GB/T 7714	WU, ZH,LU, KQ,WANG, YR,et al. EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDY OF GAASXP1-X SEMICONDUCTING RANDOM SOLID-SOLUTIONS[J]. PHYSICAL REVIEW B,1993,48(12):8694.
APA	WU, ZH.,LU, KQ.,WANG, YR.,DONG, J.,Li, HF.,...&Fang, ZZ.(1993).EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDY OF GAASXP1-X SEMICONDUCTING RANDOM SOLID-SOLUTIONS.PHYSICAL REVIEW B,48(12),8694.
MLA	WU, ZH,et al."EXTENDED X-RAY-ABSORPTION FINE-STRUCTURE STUDY OF GAASXP1-X SEMICONDUCTING RANDOM SOLID-SOLUTIONS".PHYSICAL REVIEW B 48.12(1993):8694.

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